W4NXE8C-LD00 ỨNG DỤNG,MẠCH,CHỨC NĂNG
W4NXE8C-LD00 Datasheet PDF
| Nhà sản xuất | Bao bì | Mô tả | Nhiệt độ | |
|---|---|---|---|---|
| Cree | Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
W4NXE8C-LD00 PDF | Min°C | Tối đa°C |
- Cree W4NXE8C-0D00
Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition - Cree W4NXE8C-LD00
Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition - Cree W4NXE8C-SD00
Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition