2SC3587 ỨNG DỤNG,MẠCH,CHỨC NĂNG
2SC3587 Datasheet PDF
| Nhà sản xuất | Bao bì | Mô tả | Nhiệt độ | |
|---|---|---|---|---|
| EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW-NOISE AMPLIFICATION |
2SC3587 PDF | Min°C | Tối đa°C |
- Sanyo 2SC3000
Epitaxial Planar Silicon Transistor - 2SC3000D
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 - 2SC3000E
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 - 2SC3000F
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 - Mitsubishi Electric Semiconductor 2SC3001
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - Hitachi Semiconductor 2SC3004
Silicon NPN Epitaxial(???NPN????? - Toshiba Semiconductor 2SC3006
TRANSISTOR BAND POWER AMPLIFIER APPLICATIONS) - Toshiba Semiconductor 2SC3007
SILICON EPITAXIAL TYPE PROCESS) - Toshiba 2SC3011
UHF~C BAND NOISE AMPLIFIER APPLICATIONS - 2SC3012
SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR - Mitsubishi 2SC3017
EPITAXIAL PLANAR TYPE - Mitsubishi Electric Semiconductor 2SC3018
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - Mitsubishi 2SC3019
EPITAXIAL PLANAR TYPE - Mitsubishi Electric Semiconductor 2SC3020
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - Mitsubishi Electric Semiconductor 2SC3021
EPITAXIAL PLANAR TYPE POWER TRANSISTOR)