2S DATASHEET
| PartNo | Nhà sản xuất | Mô tả |
|---|---|---|
| 2SC1855 | ||
| 2SC1856 | Hitachi | TUNER AMPLIFIER |
| 2SC1863 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1868 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1870 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1871A | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1875 | Mospec Semiconductor | POWER TRANSISTORS(4.5A,1500V,50W) |
| 2SC1880 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1881 | Hitachi Semiconductor | |
| 2SC1881(K) | TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB | |
| 2SC1881K | hitachi | Silicon Triple Diffused |
| 2SC1890 | HITACHI[Hitachi Semiconductor] | Silicon Epitaxial |
| 2SC18902SC1890A | hitachi | Silicon Epitaxial |
| 2SC1890A | Hitachi Semiconductor | Silicon Epitaxial |
| 2SC1890AD | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC1890ADTZ | Renesas Technology Corp | Silicon Epitaxial |
| 2SC1890AE | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC1890AETZ | Renesas Technology Corp | Silicon Epitaxial |
| 2SC1890AF | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC1890AFTZ | Renesas Technology Corp | Silicon Epitaxial |
| 2SC1890D | TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC1890E | TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC1890F | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC1890|2SC1890A | ||
| 2SC1893 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1894 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1895 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1904 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1905 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1905(H) | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-220AB | |
| 2SC1906 | Hitachi Semiconductor | Silicon Epitaxial Planar |
| 2SC1906TZ-E | Renesas Technology Corp | Silicon Epitaxial Planar |
| 2SC1906Y | TRANSISTOR | BJT | NPN | 19V V(BR)CEO | 50MA I(C) | TO-92 | |
| 2SC1907 | Hitachi Semiconductor | Silicon Epitaxial Planar |
| 2SC1907TZ-E | Renesas Technology Corp | Silicon Epitaxial Planar |
| 2SC1908 | Hitachi Semiconductor | |
| 2SC1910 | TRANSISTOR | BJT | PAIR | NPN | MACRO-XVAR | |
| 2SC1911 | TRANSISTOR | BJT | PAIR | NPN | MACRO-XVAR | |
| 2SC1912 | TRANSISTOR | BJT | PAIR | NPN | MACRO-XVAR | |
| 2SC1913 | Inchange Semiconductor Company Limited | Silicon Power Transistors |
| 2SC1913A | (2SCxxxxA) Transistors | |
| 2SC1920 | TRANSISTOR | BJT | PAIR | NPN | MACRO-XVAR | |
| 2SC1921 | Hitachi Semiconductor | Silicon Triple Diffused |
| 2SC1921TZ-E | Renesas Technology Corp | Silicon Triple Diffused |
| 2SC1922 | ||
| 2SC1923 | Toshiba | HIGH FREQUENCY AMPLIFIER APPLICATIONS AMPLIFIER APPLICATIONS |
| 2SC1923O | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | TO-92 | |
| 2SC1923R | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | TO-92 | |
| 2SC1923Y | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | TO-92 | |
| 2SC1927 | ||
| 2SC1929 | Panasonic Semiconductor | |
| 2SC1929P | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 400MA I(C) | TO-220AB | |
| 2SC1929Q | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 400MA I(C) | TO-220AB | |
| 2SC1929R | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 400MA I(C) | TO-220AB | |
| 2SC1929S | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 400MA I(C) | TO-220AB | |
| 2SC1940 | NEC | NPN SILICON TRANSISTOR |
| 2SC1940K | NEC | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-221VAR |
| 2SC1940L | NEC | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-221VAR |
| 2SC1940M | NEC | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-221VAR |
| 2SC1941 | NEC | NPN SILICON TRANSISTOR |
| 2SC1941K | NEC | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 50MA I(C) | TO-221VAR |
| 2SC1941L | NEC | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 50MA I(C) | TO-221VAR |
| 2SC1941M | NEC | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 50MA I(C) | TO-221VAR |
| 2SC1942 | Continental Device India | TRANSISTOR,BJT,NPN,800V V(BR)CEO,3A I(C),TO-3 |
| 2SC1944 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE(for power amplifiers band Mobile radio applications) |
| 2SC1945 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE(for power amplifiers band Mobile radio applications) |
| 2SC1946 | Mitsubishi | EPITAXIAL PLANAR TYPE |
| 2SC1946A | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE(for power amplifiers band Mobile radio applications) |
| 2SC1947 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE(for industrial power amplifiers band Mobile radio applications) |
| 2SC1953 | Panasonic Semiconductor | |
| 2SC1953Q | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 | |
| 2SC1953R | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 | |
| 2SC1953S | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 | |
| 2SC1953T | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 | |
| 2SC1955 | TRANSISTOR | BJT | NPN | 17V V(BR)CEO | 800MA I(C) | TO-39 | |
| 2SC1959 | Toshiba | AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS |
| 2SC195907 | Toshiba Semiconductor | Silicon Epitaxial Type process) |
| 2SC1959GR | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-92 | |
| 2SC1959O | BJT | |
| 2SC1959Y | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | TO-92 | |
| 2SC1959_07 | Toshiba Semiconductor | Silicon PNP Epitaxial Type (PCT process) |
| 2SC1965 | TRANSISTOR | BJT | NPN | 17V V(BR)CEO | 1A I(C) | TO-37VAR | |
| 2SC1965A | (2SCxxxxA) Transistors | |
| 2SC1966 | Mitsubishi | EPITAXIAL PLANAR TYPE |
| 2SC1967 | Mitsubishi | EPITAXIAL PLANAR TYPE |
| 2SC1968 | Mitsubishi | EPITAXIAL PLANAR TYPE |
| 2SC1968A | Mitsubishi | EPITAXIAL PLANAR TYPE |
| 2SC1969 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE(for power amplifiers band Mobile radio applications) |
| 2SC1970 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE(for power amplifiers band Mobile radio applications) |
| 2SC1971 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE(for power amplifiers band Mobile radio applications) |
| 2SC1972 | Mitsubishi Electric Semiconductor | EPITAXIAL PLANAR TYPE(for power amplifiers band Mobile radio applications) |
| 2SC1973 | PANASONIC[Panasonic Semiconductor] | TRANSISTOR EPITAXIAL PLANAR |
| 2SC1974 | ||
| 2SC1975 | ||
| 2SC1980 | Panasonic Semiconductor | SILICON EPITAXIAL PLANER TYPE |
| 2SC1980R | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20MA I(C) | TO-92 | |
| 2SC1980S | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20MA I(C) | TO-92 | |
| 2SC1980T | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20MA I(C) | TO-92 | |
| 2SC1983 | Wing Shing Computer Components | SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS INVERTERS SOLENOID RELAY DRIVERS) |
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